Philips Research team publishes details of a non-volatile memory that scales in size and performance in line with deep sub-micron silicon chip technology
Eindhoven, The Netherlands -- In the
April issue of Nature Materials, scientists at Philips Research will
publish details of an innovative phase-change memory that promises
to match the speed, density, low voltage and low power consumption
requirements of future deep sub-micron silicon chips. Unlike
existing non-volatile memory technologies such as Flash memory, the
performance of this new memory improves in virtually every respect
the smaller you make it.
Phase-change materials, which change their physical properties
depending on whether they are in their amorphous or crystalline
phase, are widely used in optical storage media such as DVD
Rewritable discs. In these discs it is the
reflectivity of the material that changes, with a laser being used
both to heat the material to the required temperature in order to
switch it between its amorphous and crystalline phases and to detect
the resultant change in its reflectivity. Philips' new solid-state
memory cell employs similar phase-change materials deposited as an
ultra-thin film on the surface of a silicon chip, and uses an
electric current to switch it between phases and to detect the
resultant change in its electrical resistance. Although similar
memory devices have been investigated before, Philips' new
'line-cell' phase-change memory has the potential to meet both the
performance and scaling requirements of future nano-electronic
silicon chips.
The secret of Philips' memory cell lies in the structure and
materials used. Previous memory cells based on phase-change
materials have suffered from the fact that a relatively high voltage
must be applied to the phase-change material in its high-resistance
amorphous state in order to drive enough current through it to heat
it. For silicon chips produced in advanced CMOS process technologies
these voltages are not practical. To overcome this problem, Philips
developed a doped Antimony/Tellurium phase-change material in which
threshold switching between the amorphous and crystalline phases
occurs at a low electric field strength of around 14V/μm.
As silicon chips move to smaller feature sizes, a corresponding
reduction in the length of the strip reduces the voltage needed for
threshold switching, keeping it within the lower voltage ratings of
these next-generation chips. For a 50-nm long strip of this material
the required voltage is a mere 0.7V, which is well within the
voltage that future silicon chips will be able to provide.
The phase-change element in Philips' line-cell is surrounded by
relatively low thermal conductivity silicon dioxide, avoiding
interface reactions and providing an extra degree of freedom in the
choice of electrode material. Phase changes occur extremely quickly,
typically within 30 ns in Philips' prototype devices, with the added
advantage that symmetrical programming pulses can be used. This is
100 to 200 times faster than the time required to program a Flash
memory cell, making Philips' line-cell phase-change memory
attractive as a DRAM replacement for certain applications. In
addition, constructing the line-cell only requires one or two
additional lithography steps, which suits it to low-cost chip
production.
"The holy grail of the embedded memory industry is a so-called
unified memory that replaces all other types, which combines the
speed of SRAM with the memory density of DRAM and the non-volatility
of Flash. Philips' new phase-change line-cell technology is a
significant step towards this goal," said Dr. Karen Attenborough,
project leader of the Scalable Unified Memory project at Philips
Research.
Demonstration of this new memory cell puts Philips in the same
leading-edge position for nanoelectronic phase-change memory
development that it has enjoyed for many years in the development of
phase-change technology for optical storage.
Measurement of the performance of a phase change memory chip
Ellen de Vries
Philips Research
Tel.: +31 40 27 42321
Mobile: +31 6 53243037
Email: ellen.de.vries@philips.com
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