Philips Research - Download Pictures
Pictures from Philips Research Password
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If you want to download high-resolution versions of the pictures,
please click at the hyperlink below the thumbnail. The use of the pictures is free but in publications the source of these pictures must be mentioned. The source can be found below the caption of the pictures. |
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22 x 19 cm, 300 dpi, 901 KB
Storage Applications Digital storage allows to use the stored content in any networked device in the home. Photo: Philips |
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20 x 20 cm, 300 dpi, 1204 KB
Storage Applications Sharing content in different mobile devices. Photo: Philips |
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20 x 20 cm, 300 dpi, 900 KB
Testing set-up for high-speed optical recording research. Photo: Philips |
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20 x 21 cm, 300 dpi, 750 KB
Measuring the performance of experimental MRAM circuits. Photo: Philips |
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20 x 21 cm, 300 dpi, 1150 KB
Manufacturing of experimental MRAM circuits. Photo: Philips |
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19 x 18 cm, 300 dpi, 865 KB
GMR Solid-state Magnetic Random Access Memory (MRAM) devices are based on either the Giant Magneto-Resistive (GMR) effect or the Tunnelling Magneto-Resistive (TMR) effect. This picture illustrates the GMR effect. Free electrons are generated ‘spin-up’ and ‘spin-down’ in equal proportions. When the orientation of both magnetic layers is the same, only one type of electron is retarded (low-resistance state - top diagram). When the magnetic orientations of the layers are opposed, both spin-up and spin-down electrons suffer retardation (high-resistance state - bottom diagram). Photo: Philips |
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19 x 18 cm, 300 dpi, 828 KB
TMR Solid-state Magnetic Random Access Memory (MRAM) devices are based on either the Giant Magneto-Resistive (GMR) effect or the Tunnelling Magneto-Resistive (TMR) effect. This picture illustrates the TMR effect. The tunnelling energy for electrons that are spin-aligned with both magnetic layers is less than that for electrons that are spin-aligned with only one layer. When the orientation of both magnetic layers is the same, spin-aligned electrons have a higher probability of tunnelling through the insulating layer (low-resistance state - top diagram). When the magnetic orientations of the layers are opposed, the tunnelling probability of both spin-up and spin-down electrons is reduced (high-resistance state - bottom diagram). Photo: Philips |
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