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Philips Research - Download Pictures
Pictures from Philips Research Password
Issue 16, July 2003
If you want to download high-resolution versions of the pictures,
please click at the hyperlink below the thumbnail.
The use of the
pictures is free but in publications the source of these pictures must
be mentioned. The source can be found below the caption of the
pictures. |
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17 x 17 cm, 300 dpi, 807 KB
Lighting
Lifetime testing of colour converters for solid-state
lighting.
Photo: Philips
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17 x 17 cm, 300 dpi, 983 KB
Lighting
Characterization of high-efficiency organic LEDs for
lighting applications.
Photo: Philips
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17 x 17 cm, 300 dpi, 807 KB
Lighting
High-performance chemicals for white LEDs used for
lighting applications.
Photo: Philips
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17 x 22 cm, 300 dpi, 1007 KB
IC Technology
Manufacturing of passive RF devices
Photo: Philips
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13 x 8 cm, 300 dpi, 551 KB
IC Technology
Schematic of a Pit Capacitor.
Deep trenches in the substrate increase the surface area
leading to higher capacitance values.
Photo: Philips
Photo: Philips
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12.5 x 14.5 cm, 300 dpi, 705 KB
Storage
Wafer with experimental non-volatile solid-state memory
devices.
Photo: Philips
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13.5 x 27 cm, 300 dpi, 764 KB
Storage
Various types of non-volatile solid-state memories
Fig.1 A Flash memory cell uses the charge stored in the
floating gate of a MOS transistor to alter the
transistor's threshold (turn-on) voltage. Philips'
embedded Flash memory cell adds an access transistor in
order to achieve a low-voltage read capability coupled
with less complex erase cycles.
Fig.2 MRAM relies on the changing resistance of a
magneto-resistive tunnel junction in response to aligned
or opposed magnetic fields.
Fig.3 In the FESRAM memory cell being developed by
Philips Research, the tunnel resistance of a Schottky
barrier is changed by flipping the polarization of the
ferro-electric semiconductor on one side of the barrier.
Photo: Philips
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